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Article

Nanocomposite Thin Films: Structural, Electrical, and Optoelectronic Properties of n-ZnNiO/p-Si Heterostructures

1
Institute of Physics, Mathematics, Economy and Innovation Technologies, Drohobych Ivan Franko State Pedagogical University, 24 Ivan Franko St., 82100 Drogobych, Ukraine
2
Department of Physics, Lviv Polytechnic National University, 12 Stepana Bandery St, 79000 Lviv, Ukraine
3
Institute of Materials Engineering, Faculty of Exact and Technical Sciences, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland
*
Author to whom correspondence should be addressed.
Appl. Sci. 2026, 16(5), 2392; https://doi.org/10.3390/app16052392
Submission received: 5 February 2026 / Revised: 24 February 2026 / Accepted: 26 February 2026 / Published: 28 February 2026
(This article belongs to the Special Issue Design and Development of Advanced Thin Films Based on Nanocomposites)

Abstract

This work investigated the structural, morphological, electrical and photovoltaic properties of n-ZnNiO/p-Si heterostructures. ZnNiO nanocomposite thin films were fabricated on p-Si (100) substrates using pulsed laser deposition, enabling the formation of n-type oxide/p-type silicon heterojunctions. The crystalline structure and surface morphology of the deposited thin films were examined using X-ray diffraction and scanning electron microscopy, revealing well-defined crystalline features and uniform surface morphology. The electrical characteristics were analyzed through current–voltage measurements, allowing the extraction of key diode parameters. In addition, the optoelectronic response under ultraviolet illumination was investigated, demonstrating pronounced photosensitivity in the UV spectral range. Several important electrical and optoelectronic parameters relevant to ultraviolet photodetection were determined and discussed. The obtained results indicate that ZnNiO-based heterostructures combined with silicon substrates constitute a promising material platform for advanced optoelectronic and ultraviolet applications.
Keywords: nanocomposite thin films; heterostructure zinc oxide; pulsed laser deposition; UV radiation detection nanocomposite thin films; heterostructure zinc oxide; pulsed laser deposition; UV radiation detection

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MDPI and ACS Style

Virt, I.; Padalka, I.; Chekailo, M.; Cieniek, B.; Potera, P. Nanocomposite Thin Films: Structural, Electrical, and Optoelectronic Properties of n-ZnNiO/p-Si Heterostructures. Appl. Sci. 2026, 16, 2392. https://doi.org/10.3390/app16052392

AMA Style

Virt I, Padalka I, Chekailo M, Cieniek B, Potera P. Nanocomposite Thin Films: Structural, Electrical, and Optoelectronic Properties of n-ZnNiO/p-Si Heterostructures. Applied Sciences. 2026; 16(5):2392. https://doi.org/10.3390/app16052392

Chicago/Turabian Style

Virt, Ihor, Ivan Padalka, Mykola Chekailo, Bogumił Cieniek, and Piotr Potera. 2026. "Nanocomposite Thin Films: Structural, Electrical, and Optoelectronic Properties of n-ZnNiO/p-Si Heterostructures" Applied Sciences 16, no. 5: 2392. https://doi.org/10.3390/app16052392

APA Style

Virt, I., Padalka, I., Chekailo, M., Cieniek, B., & Potera, P. (2026). Nanocomposite Thin Films: Structural, Electrical, and Optoelectronic Properties of n-ZnNiO/p-Si Heterostructures. Applied Sciences, 16(5), 2392. https://doi.org/10.3390/app16052392

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