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Volume 15
Issue 13
10.3390/app15137078
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide

by
Teodor Milenov
1,*,
Vladimir Mehandzhiev
2,
Peter Rafailov
2,3,
Ivalina Avramova
4,
Ivan Zahariev
5,
Georgi Avdeev
5,
Daniela Karashanova
6,
Biliana Georgieva
6,
Penka Terziyska
2,
Kiril Kirilov
7,
Blagoy Blagoev
2,
Stefan Kolev
1,
Dimitar Dimov
1,
Dobromir Kalchevski
1,
Desislava Karaivanova
1 and
Valentin Popov
7
1
“Acad. E. Djakov” Institute of Electronics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
2
“G. Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
3
National Centre of Excellence Mechatronics and Clean Technologies, Bulgarian Academy of Sciences, 8 Kliment Ohridski Blvd., Blk. 8, 1756 Sofia, Bulgaria
4
Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, “Acad. Georgi Bonchev” Str. bld.11, 1113 Sofia, Bulgaria
5
Institute of Physical Chemistry “Rostislaw Kaishev”, Bulgarian Academy of Sciences, “Acad. Georgi Bonchev” Str. bld.11, 1113 Sofia, Bulgaria
6
Institute of Optical Materials and Technologies “Acad. Jordan Malinowski”, Bulgarian Academy of Sciences, 109, Acad. G. Bontchev Str., 1113 Sofia, Bulgaria
7
Faculty of Physics, Sofia University “St. Kliment Ohridski”, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria
*
Author to whom correspondence should be addressed.
Appl. Sci. 2025, 15(13), 7078; https://doi.org/10.3390/app15137078 (registering DOI)
Submission received: 3 May 2025 / Revised: 12 June 2025 / Accepted: 20 June 2025 / Published: 23 June 2025
(This article belongs to the Section Surface Sciences and Technology)
Versions Notes

Featured Application

Our experimental studies show that the synthesized SiC thin films with a complex composition do not contain cracks and/or voids and can be used as an intermediate layer for further synthesis of thicker single-crystalline SiC layers for direct application in electronic element production and technology.

Abstract

We present the results of silicon carbide (SiC) thin film synthesis on Si(111) substrates using chemical vapor deposition by decomposing CH4 in H2 at 1135 °C. The experiments were conducted in an Oxford Nanofab Plasmalab System 100 for carbon phase deposition times of 3, 5, 20, 60, and 90 min on Si(111) with or without native oxide, following established protocols. Our studies show that either predominantly crystalline SiC or a mixture of SiC and Si–O/Si–O–C glass forms on Si substrates significantly doped with carbon and oxygen, depending on the presence or absence of native oxide. The thickness of the SiC film ranges from approximately 5–6 nm for films synthesized in 3 min to over 15 nm for those synthesized in 90 min, while the size of the crystal grains varies from a few to 110 nm depending on the synthesis duration. The findings suggest that the complex composition of the thin films and the region beneath them can more effectively compensate for the differences in lattice parameters and thermal expansion coefficients between the SiC film and the Si substrate; thus, this method is promising for depositing intermediate thin films of SiC on Si substrates.
Keywords: silicon carbide; chemical vapor deposition; X-ray diffraction; X-ray photoelectron spectroscopy; transmission electron microscopy silicon carbide; chemical vapor deposition; X-ray diffraction; X-ray photoelectron spectroscopy; transmission electron microscopy

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MDPI and ACS Style

Milenov, T.; Mehandzhiev, V.; Rafailov, P.; Avramova, I.; Zahariev, I.; Avdeev, G.; Karashanova, D.; Georgieva, B.; Terziyska, P.; Kirilov, K.; et al. The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide. Appl. Sci. 2025, 15, 7078. https://doi.org/10.3390/app15137078

AMA Style

Milenov T, Mehandzhiev V, Rafailov P, Avramova I, Zahariev I, Avdeev G, Karashanova D, Georgieva B, Terziyska P, Kirilov K, et al. The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide. Applied Sciences. 2025; 15(13):7078. https://doi.org/10.3390/app15137078

Chicago/Turabian Style

Milenov, Teodor, Vladimir Mehandzhiev, Peter Rafailov, Ivalina Avramova, Ivan Zahariev, Georgi Avdeev, Daniela Karashanova, Biliana Georgieva, Penka Terziyska, Kiril Kirilov, and et al. 2025. "The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide" Applied Sciences 15, no. 13: 7078. https://doi.org/10.3390/app15137078

APA Style

Milenov, T., Mehandzhiev, V., Rafailov, P., Avramova, I., Zahariev, I., Avdeev, G., Karashanova, D., Georgieva, B., Terziyska, P., Kirilov, K., Blagoev, B., Kolev, S., Dimov, D., Kalchevski, D., Karaivanova, D., & Popov, V. (2025). The Study of the Synthesis of SiC by the Carbonization of Si(111) Substrates: The Role of Native Silicon Oxide. Applied Sciences, 15(13), 7078. https://doi.org/10.3390/app15137078

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