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Lazarev S, Kim YY, Gelisio L, Bi Z, Nowzari A, Zaluzhnyy IA, Khubbutdinov R, Dzhigaev D, Jeromin A, Keller TF, et al. Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. Applied Sciences. 2021; 11(20):9419. https://doi.org/10.3390/app11209419

Lazarev, Sergey, Young Yong Kim, Luca Gelisio, Zhaoxia Bi, Ali Nowzari, Ivan A. Zaluzhnyy, Ruslan Khubbutdinov, Dmitry Dzhigaev, Arno Jeromin, Thomas F. Keller, and et al. 2021. "Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire" Applied Sciences 11, no. 20: 9419. https://doi.org/10.3390/app11209419

Lazarev, S., Kim, Y. Y., Gelisio, L., Bi, Z., Nowzari, A., Zaluzhnyy, I. A., Khubbutdinov, R., Dzhigaev, D., Jeromin, A., Keller, T. F., Sprung, M., Mikkelsen, A., Samuelson, L., & Vartanyants, I. A. (2021). Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. Applied Sciences, 11(20), 9419. https://doi.org/10.3390/app11209419