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Journal: Appl. Sci., 2020
Volume: 10
Number: 753

Article: Study of a SiC Trench MOSFET Edge-Termination Structure with a Bottom Protection Well for a High Breakdown Voltage
Authors: by Jee-Hun Jeong, Ju-Hong Cha, Goon-Ho Kim, Sung-Hwan Cho and Ho-Jun Lee
Link: https://www.mdpi.com/2076-3417/10/3/753

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