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Instability and Drift Phenomena in Switching RF-MEMS Microsystems

Centre for Materials and Microsystems, Fondazione Bruno Kessler, 38123 Trento, Italy
Actuators 2019, 8(1), 15; https://doi.org/10.3390/act8010015
Received: 11 January 2019 / Revised: 8 February 2019 / Accepted: 14 February 2019 / Published: 18 February 2019
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Abstract

MEMS switches include mobile beams in their mechanical structure and these suspended parts are essential for the device functioning. This paper illustrates the most important instability phenomena related to MEMS switches. Starting from the most important instability exploited in these devices—the electrical actuation—the paper also analyzes other important effects related to instability phenomena, which are very common in this type of technology. Instabilities due to dielectric charge trapping, fabrication tolerances, mechanical deformation, contact wear, and temperature variation are duly analyzed, giving a comprehensive view of the complexity encountered in the reliable functioning of these apparently simple devices. View Full-Text
Keywords: RF-MEMS; RF switch; electrical actuation RF-MEMS; RF switch; electrical actuation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Mulloni, V. Instability and Drift Phenomena in Switching RF-MEMS Microsystems. Actuators 2019, 8, 15.

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