Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current

State Key Laboratory of Advanced Special Steels, Shanghai Key Laboratory of Advanced Ferrometallurgy, School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China

Shanghai Institute of Materials Genome, Shanghai 200444, China

School of Materials Science and Engineering, University of Science and Technology Liaoning, Anshan 114051, China

Authors to whom correspondence should be addressed.

Academic Editor: Nong Gao

Metals 2017, 7(6), 184; https://doi.org/10.3390/met7060184

Received: 24 March 2017 / Revised: 5 May 2017 / Accepted: 5 May 2017 / Published: 23 May 2017

(This article belongs to the Special Issue Recent Advances in Study of Solid-Liquid Interfaces and Solidification of Metals)

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Abstract

Investigating the separation of the primary silicon phase in Al-Si hypereutectic alloys is of high importance for the production of solar grade silicon. The present paper focuses on the effect of growth velocity on the electric current pulse (ECP)-induced separation of primary silicon in a directionally solidified Al-20.5 wt % Si hypereutectic alloy. Experimental results show that lower growth velocity promotes the enrichment tendency of primary silicon at the bottom region of the sample. The maximum measured area percentage of segregated primary silicon in the sample solidified at the growth velocity of 4 μm/s is as high as 82.6%, whereas the corresponding value is only 59% in the sample solidified at the growth velocity of 24 μm/s. This is attributed to the fact that the stronger forced flow is generated to promote the precipitation of primary silicon accompanied by a higher concentration of electric current in the mushy zone under the application of a slower growth velocity. View Full-Text

Keywords: Al-Si hypereutectic alloy; growth velocity; separation of primary silicon; solidification; electric current pulse

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MDPI and ACS Style

Zhang, Y.; Ye, C.; Xu, Y.; Zhong, H.; Chen, X.; Miao, X.; Song, C.; Zhai, Q. Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current. Metals 2017, 7, 184. https://doi.org/10.3390/met7060184

AMA Style

Zhang Y, Ye C, Xu Y, Zhong H, Chen X, Miao X, Song C, Zhai Q. Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current. Metals. 2017; 7(6):184. https://doi.org/10.3390/met7060184

Chicago/Turabian Style

Zhang, Yunhu, Chunyang Ye, Yanyi Xu, Honggang Zhong, Xiangru Chen, Xincheng Miao, Changjiang Song, and Qijie Zhai. 2017. "Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current" Metals 7, no. 6: 184. https://doi.org/10.3390/met7060184

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Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current

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