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Open AccessArticle

Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems

Hiroshima Institute of Technology, Faculty of Engineering, 2-1-1 Miyake, Saeki-ku, Hiroshima 731-5193, Japan
Osaka Prefecture University, Graduate School of Science, Osaka 599-8531, Japan
Department of Materials Science & Engineering, Kyoto University, Kyoto 606-8501, Japan
Author to whom correspondence should be addressed.
Crystals 2019, 9(9), 447;
Received: 9 August 2019 / Revised: 21 August 2019 / Accepted: 27 August 2019 / Published: 29 August 2019
(This article belongs to the Special Issue Crystal Structure Characterization by Powder Diffraction)
Sb–Te and Bi–Te compounds are key components of thermoelectric or phase change recording devices. These two binary systems form commensurately/incommensurately modulated long-period layer stacking structures known as homologous phases that comprise discrete intermetallic compounds and X phases. In the latter, the homologous structures are not discrete but rather appear continuously with varying stacking periods that depend on the binary composition. However, the regions over which these X phases exist have not yet been clarified. In this study, precise synchrotron X-ray diffraction analyses of various specimens were conducted. The results demonstrate that the X phase regions are located between Sb20Te3 and Sb5Te6 in the Sb–Te system and between Bi8Te3 and Bi4Te5 in the Bi–Te system. View Full-Text
Keywords: binary alloy; phase diagram; X-ray diffraction; superlattice binary alloy; phase diagram; X-ray diffraction; superlattice
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Kifune, K.; Wakiyama, T.; Kanaya, H.; Kubota, Y.; Matsunaga, T. Boundaries of the X Phases in Sb–Te and Bi–Te Binary Alloy Systems. Crystals 2019, 9, 447.

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