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Open AccessArticle

The Influence of B, N and Si Doping on the CH3 Adsorption on the Diamond Surface Based on DFT Calculations

School of Mechanical Engineering, Tongji University, Shanghai 201804, China
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Author to whom correspondence should be addressed.
Crystals 2019, 9(8), 427; https://doi.org/10.3390/cryst9080427
Received: 28 June 2019 / Revised: 1 August 2019 / Accepted: 14 August 2019 / Published: 17 August 2019
(This article belongs to the Special Issue Synthesis and Characterization of Diamond Crystals)
To better understand the influence mechanism of boron, nitrogen and silicon dopants on the growth of chemical vapor deposition (CVD) diamond film, density functional calculations have been performed to reveal the different impact of the impurities on the CH3 adsorption on diamond surface. The substituted doping and radical doping of diamond (111) and (100) − 2 × 1 surface are both considered. The calculation results indicate that the CH3 radicals are hardly adsorbed on nitrogen atoms and thus may cause vacancy in the diamond lattice easily. Boron substituted doping will disfavor the adsorption of CH3 due to the lacking of valence electron. However, the empty p orbitals of boron atom will help the chemical adsorbing of CH3 radicals. The substituted silicon doping has little influence on the CH3 adsorption, as Si atom has the same outer valence electron structure with C atom. In the case of radical doping, the adsorption energy of CH3 will be reduced due to the steric hindrance between NH2 or SiH3 with CH3. The adsorption energy can be slightly enhanced when BH2 radical is pre-adsorbed on diamond (111) surface. However, the BH2 pre-adsorbed on diamond (100) − 2 × 1 surface may interact with surface radical carbon site and result in a large reduction of CH3 adsorption energy. Thus, the boron doping may hinder the formation of the (100) facet during the CVD diamond deposition under a certain condition. View Full-Text
Keywords: boron; silicon; nitrogen; growth mechanism; diamond film; first principles boron; silicon; nitrogen; growth mechanism; diamond film; first principles
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Wang, L.; Liu, J.; Tang, T. The Influence of B, N and Si Doping on the CH3 Adsorption on the Diamond Surface Based on DFT Calculations. Crystals 2019, 9, 427.

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