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Energy-Dependent RBS Channelling Analysis of Epitaxial ZnO Layers Grown on ZnO by RF-Magnetron Sputtering

1
Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Germany
2
Leibniz-Institut für Photonische Technologien, Albert-Einstein-Straße 9, 07745 Jena, Germany
3
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), Institute for Solar Fuels, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(6), 290; https://doi.org/10.3390/cryst9060290
Received: 30 April 2019 / Revised: 27 May 2019 / Accepted: 30 May 2019 / Published: 4 June 2019
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Abstract

The transparent conducting oxides ZnO and ZnO:Al are interesting materials for a wide range of applications. Several of these applications need a large area, single crystalline, and specially doped thin layers. A common technique for the fabrication of those layers is RF (radio frequency) -magnetron sputtering. The investigation of the crystal quality of such layers requires methods of analysis that are destruction free and that are able to obtain information about the concentration and type of defects versus depth. One such option is the Rutherford backscattering spectroscopy (RBS) in channelling mode. In this work, we exploit the channelling effect and its energy dependence, which are sensitive to the type of defects. By using appropriate software and measuring RBS channelling spectra with different beam energies, we were able to determine the depth distribution of point defects and dislocation loops. The presence of dislocation loops was proven using other previously applied analysis methods. The main advantage of RBS in channelling mode is the quantification of point defects, which can be important for defining the electrical and optical properties of such layers. The technique demonstrated is applicable to other defective crystals or thin crystalline layers. View Full-Text
Keywords: ZnO:Al; RBS channelling; structural characterisation ZnO:Al; RBS channelling; structural characterisation
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Wittkämper, F.; Bikowski, A.; Ellmer, K.; Gärtner, K.; Wendler, E. Energy-Dependent RBS Channelling Analysis of Epitaxial ZnO Layers Grown on ZnO by RF-Magnetron Sputtering. Crystals 2019, 9, 290.

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