Investigation of Si Dendrites by Electron-Beam-Induced Current
AbstractThis paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport. View Full-Text
Share & Cite This Article
Yi, W.; Chen, J.; Ito, S.; Nakazato, K.; Kimura, T.; Sekiguchi, T.; Fujiwara, K. Investigation of Si Dendrites by Electron-Beam-Induced Current. Crystals 2018, 8, 317.
Yi W, Chen J, Ito S, Nakazato K, Kimura T, Sekiguchi T, Fujiwara K. Investigation of Si Dendrites by Electron-Beam-Induced Current. Crystals. 2018; 8(8):317.Chicago/Turabian Style
Yi, Wei; Chen, Jun; Ito, Shun; Nakazato, Koji; Kimura, Takashi; Sekiguchi, Takashi; Fujiwara, Kozo. 2018. "Investigation of Si Dendrites by Electron-Beam-Induced Current." Crystals 8, no. 8: 317.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.