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Crystals 2018, 8(8), 317;

Investigation of Si Dendrites by Electron-Beam-Induced Current

National Institute for Materials Science, Tsukuba 305-0044, Japan
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8577, Japan
Author to whom correspondence should be addressed.
Received: 14 July 2018 / Revised: 3 August 2018 / Accepted: 5 August 2018 / Published: 7 August 2018
(This article belongs to the Special Issue Growth and Evaluation of Multicrystalline Silicon)
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This paper reports on electron-beam-induced current (EBIC) characterization of special multicrystalline Si ingot by dendritic growth under high undercooling. Grain boundaries (GBs), dislocations, and their interaction with carbon related precipitates were investigated. The difference between grains from dendrite and non-dendrite growth was compared. In dendrite grains, parallel twins were frequently found. In non-dendrite grains, irregular GBs of various characters co-existed. Both parallel twins and irregular GBs exhibited dark EBIC contrast at room temperature, indicating the presence of minority carrier recombination centers due to impurity contamination. However, sometimes in non-dendrite grains GBs were visualized with bright EBIC contrast with enhanced collection of charge carriers. The origin of the abnormal bright EBIC contrast was explored and it turned out to be SiC related precipitates, which made GBs conduction channels for electron transport. View Full-Text
Keywords: mc-Si; dendrite; EBIC; grain boundaries mc-Si; dendrite; EBIC; grain boundaries

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Yi, W.; Chen, J.; Ito, S.; Nakazato, K.; Kimura, T.; Sekiguchi, T.; Fujiwara, K. Investigation of Si Dendrites by Electron-Beam-Induced Current. Crystals 2018, 8, 317.

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