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Crystals 2018, 8(1), 9; https://doi.org/10.3390/cryst8010009

Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size

1
College of Mechanical Engineering, Zhejiang University of Technology, Hangzhou 310014, China
2
Advanced Materials Research Center, Northwest Institute for Non-Ferrous Metal Research, Xi’an 710016, China
3
Key Laboratory of Automobile Materials, College of Materials Science and Engineering Jilin University, Nanling Campus, Changchun 130025, China
*
Author to whom correspondence should be addressed.
Received: 25 October 2017 / Revised: 9 December 2017 / Accepted: 19 December 2017 / Published: 26 December 2017
(This article belongs to the Special Issue Crystal Indentation Hardness)
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Abstract

Nanoindentation morphologies of crystalline copper have been probed at the grain scale. Experimental tests have been conducted on nanocrystalline (NC), ultrafine-grained (UFG), and coarse-grained (CG) copper samples with a new Berkvoich indenter at the strain rate of 0.04/s without holding time at an indentation depth of 2000 nm at room temperature. As the grain size increases, the height of the pile-up around the residual indentation increases and then exhibits a slightly decrease in the CG Cu. The maximum of the pile-up in the CG Cu obviously deviates from the center of the indenter sides. Our analysis has revealed that the dislocation motion and GB activities in the NC Cu, some cross- and multiple-slip dislocations inside the larger grain in the UFG Cu, and forest dislocations from the intragranular Frank-Read sources in the CG Cu would directly induce this distinct pile-up effect. View Full-Text
Keywords: nanoindentation; pile-up effect; grain size; dislocation motion; grain boundary activities nanoindentation; pile-up effect; grain size; dislocation motion; grain boundary activities
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Hu, J.; Zhang, Y.; Sun, W.; Zhang, T. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Crystals 2018, 8, 9.

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