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Journal: Crystals, 2017
Volume: 7
Number: 163
163
Article: Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
Authors: by Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin and Kirill D. Shcherbachev
Link: https://www.mdpi.com/2073-4352/7/6/163

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