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Journal: Crystals, 2026
Volume: 16
Number: 467
467
Article: Effects of Substrate Polarity and Pre-Growth Treatments on Plasma-Assisted Molecular-Beam Epitaxy of β-Ga₂O₃ on 4° Off-Axis 4H-SiC
Authors: by Raouf Hayyak, Trong Si Ngo, Taswar Iqbal, Mee-Hi Choi, Soon-Ku Hong, Im-Gyu Yeo, Moonkyong Na and Tai Hee Eun
Link: https://www.mdpi.com/2073-4352/16/7/467

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