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Journal: Crystals, 2024
Volume: 14
Number: 485

Article: Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
Authors: by Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller and Umesh K. Mishra
Link: https://www.mdpi.com/2073-4352/14/6/485

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