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Journal: Crystals, 2023
Volume: 13
Number: 935

Article: The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers
Authors: by Weilong Yuan, Yicheng Pei, Ning Guo, Yunkai Li, Xiuhai Zhang and Xingfang Liu
Link: https://www.mdpi.com/2073-4352/13/6/935

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