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Journal: Crystals, 2023
Volume: 13
Number: 736
736
Article: Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
Authors: by Alan G. Jacobs, Boris N. Feigelson, Joseph A. Spencer, Marko J. Tadjer, Jennifer K. Hite, Karl D. Hobart and Travis J. Anderson
Link: https://www.mdpi.com/2073-4352/13/5/736

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