Tang, Z.; Gu, L.; Ma, H.; Dai, K.; Luo, Q.; Zhang, N.; Huang, J.; Fan, J.
Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals 2023, 13, 193.
https://doi.org/10.3390/cryst13020193
AMA Style
Tang Z, Gu L, Ma H, Dai K, Luo Q, Zhang N, Huang J, Fan J.
Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals. 2023; 13(2):193.
https://doi.org/10.3390/cryst13020193
Chicago/Turabian Style
Tang, Zhuorui, Lin Gu, Hongping Ma, Kefeng Dai, Qian Luo, Nan Zhang, Jiyu Huang, and Jiajie Fan.
2023. "Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD" Crystals 13, no. 2: 193.
https://doi.org/10.3390/cryst13020193
APA Style
Tang, Z., Gu, L., Ma, H., Dai, K., Luo, Q., Zhang, N., Huang, J., & Fan, J.
(2023). Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD. Crystals, 13(2), 193.
https://doi.org/10.3390/cryst13020193