Peng, S.;                     Zhang, J.;                     Jin, Z.;                     Zhang, D.;                     Shi, J.;                     Wei, S.    
        Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals 2022, 12, 184.
    https://doi.org/10.3390/cryst12020184
    AMA Style
    
                                Peng S,                                 Zhang J,                                 Jin Z,                                 Zhang D,                                 Shi J,                                 Wei S.        
                Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals. 2022; 12(2):184.
        https://doi.org/10.3390/cryst12020184
    
    Chicago/Turabian Style
    
                                Peng, Songang,                                 Jing Zhang,                                 Zhi Jin,                                 Dayong Zhang,                                 Jingyuan Shi,                                 and Shuhua Wei.        
                2022. "Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene" Crystals 12, no. 2: 184.
        https://doi.org/10.3390/cryst12020184
    
    APA Style
    
                                Peng, S.,                                 Zhang, J.,                                 Jin, Z.,                                 Zhang, D.,                                 Shi, J.,                                 & Wei, S.        
        
        (2022). Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals, 12(2), 184.
        https://doi.org/10.3390/cryst12020184