Peng, S.; Zhang, J.; Jin, Z.; Zhang, D.; Shi, J.; Wei, S.
Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals 2022, 12, 184.
https://doi.org/10.3390/cryst12020184
AMA Style
Peng S, Zhang J, Jin Z, Zhang D, Shi J, Wei S.
Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals. 2022; 12(2):184.
https://doi.org/10.3390/cryst12020184
Chicago/Turabian Style
Peng, Songang, Jing Zhang, Zhi Jin, Dayong Zhang, Jingyuan Shi, and Shuhua Wei.
2022. "Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene" Crystals 12, no. 2: 184.
https://doi.org/10.3390/cryst12020184
APA Style
Peng, S., Zhang, J., Jin, Z., Zhang, D., Shi, J., & Wei, S.
(2022). Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene. Crystals, 12(2), 184.
https://doi.org/10.3390/cryst12020184