Li, X.; Xu, J.; Wei, T.; Yang, W.; Jin, S.; Wu, Y.; Lu, S.
Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy. Crystals 2021, 11, 1590.
https://doi.org/10.3390/cryst11121590
AMA Style
Li X, Xu J, Wei T, Yang W, Jin S, Wu Y, Lu S.
Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy. Crystals. 2021; 11(12):1590.
https://doi.org/10.3390/cryst11121590
Chicago/Turabian Style
Li, Xuefei, Jianming Xu, Tieshi Wei, Wenxian Yang, Shan Jin, Yuanyuan Wu, and Shulong Lu.
2021. "Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy" Crystals 11, no. 12: 1590.
https://doi.org/10.3390/cryst11121590
APA Style
Li, X., Xu, J., Wei, T., Yang, W., Jin, S., Wu, Y., & Lu, S.
(2021). Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy. Crystals, 11(12), 1590.
https://doi.org/10.3390/cryst11121590