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Journal: Crystals, 2021
Volume: 11
Number: 1186
1186
Article:
Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation
Authors:
by
Hong Zhou, Shifan Zeng, Jincheng Zhang, Zhihong Liu, Qian Feng, Shengrui Xu, Jinfeng Zhang and Yue Hao
Link:
https://www.mdpi.com/2073-4352/11/10/1186
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Cite
Zhou, H.; Zeng, S.; Zhang, J.; Liu, Z.; Feng, Q.; Xu, S.; Zhang, J.; Hao, Y. Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation. Crystals 2021, 11, 1186. https://doi.org/10.3390/cryst11101186
Zhou H, Zeng S, Zhang J, Liu Z, Feng Q, Xu S, Zhang J, Hao Y. Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation. Crystals. 2021; 11(10):1186. https://doi.org/10.3390/cryst11101186
Chicago/Turabian StyleZhou, Hong, Shifan Zeng, Jincheng Zhang, Zhihong Liu, Qian Feng, Shengrui Xu, Jinfeng Zhang, and Yue Hao. 2021. "Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation" Crystals 11, no. 10: 1186. https://doi.org/10.3390/cryst11101186
APA StyleZhou, H., Zeng, S., Zhang, J., Liu, Z., Feng, Q., Xu, S., Zhang, J., & Hao, Y. (2021). Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation. Crystals, 11(10), 1186. https://doi.org/10.3390/cryst11101186
