Comprehensive Study and Optimization of Implementing p-NiO in β-Ga2O3 Based Diodes via TCAD Simulation

Zhou, Hong; Zeng, Shifan; Zhang, Jincheng; Liu, Zhihong; Feng, Qian; Xu, Shengrui; Zhang, Jinfeng; Hao, Yue

doi:10.3390/cryst11101186

Open AccessArticle

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation

by

Hong Zhou

,

Shifan Zeng

,

Jincheng Zhang

^*,

Zhihong Liu

^*,

Qian Feng

,

Shengrui Xu

,

Jinfeng Zhang

and

Yue Hao

Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

^*

Authors to whom correspondence should be addressed.

Crystals 2021, 11(10), 1186; https://doi.org/10.3390/cryst11101186

Submission received: 15 August 2021 / Revised: 21 September 2021 / Accepted: 24 September 2021 / Published: 29 September 2021

(This article belongs to the Special Issue Wide Bandgap Semiconductor Materials and Devices)

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Abstract

In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga₂O₃ based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga₂O₃ heterojunction (HJ) barrier Schottky (HJBS) diode, and HJ-PN diode through the TCAD simulation. In particular, we provide design guidelines for future p-NiO-related Ga₂O₃ diodes with material doping concentrations and dimensions to be taken into account. Although HJ-PN has a ~1 V higher turn-on voltage (V_on), its breakdown voltage (BV) is the highest among all diodes. We found that for SBD with p-NiO GRs and HJBS, their forward electrical characteristics and reverse leakage current are related to the total width and the doping concentration of p-NiO, the BV is only related to the doping concentration of p-NiO_, and the optimal doping concentration of p-NiO is found to be 4 × 10¹⁷ cm⁻³. Compared with the SBD without p-NiO, the BV of the SBD with p-NiO and HJBS diode can be essentially improved by 3 times. As a result, HJ-PN diode, SBD with p-NiO GRs, and HJ-BS diode achieve a BV/specific on-resistance (R_on,sp) of 5705 V/4.3 mΩ·cm², 3006 V/3.07 mΩ·cm², and 3004 V/3.06 mΩ·cm², respectively. Based on different application requirements, this work provides a useful insight about the diode selection with various structures.

Keywords: Ga₂O₃; NiO; diode; simulation; Schottky diodes; JBS; PN junction

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MDPI and ACS Style

Zhou, H.; Zeng, S.; Zhang, J.; Liu, Z.; Feng, Q.; Xu, S.; Zhang, J.; Hao, Y. Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation. Crystals 2021, 11, 1186. https://doi.org/10.3390/cryst11101186

AMA Style

Zhou H, Zeng S, Zhang J, Liu Z, Feng Q, Xu S, Zhang J, Hao Y. Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation. Crystals. 2021; 11(10):1186. https://doi.org/10.3390/cryst11101186

Chicago/Turabian Style

Zhou, Hong, Shifan Zeng, Jincheng Zhang, Zhihong Liu, Qian Feng, Shengrui Xu, Jinfeng Zhang, and Yue Hao. 2021. "Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation" Crystals 11, no. 10: 1186. https://doi.org/10.3390/cryst11101186

APA Style

Zhou, H., Zeng, S., Zhang, J., Liu, Z., Feng, Q., Xu, S., Zhang, J., & Hao, Y. (2021). Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation. Crystals, 11(10), 1186. https://doi.org/10.3390/cryst11101186

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Comprehensive Study and Optimization of Implementing p-NiO in β-Ga₂O₃ Based Diodes via TCAD Simulation

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