Article Versions Notes

Persichetti L, Montanari M, Ciano C, Di Gaspare L, Ortolani M, Baldassarre L, Zoellner M, Mukherjee S, Moutanabbir O, Capellini G, et al. Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals. 2020; 10(3):179. https://doi.org/10.3390/cryst10030179

Persichetti, Luca, Michele Montanari, Chiara Ciano, Luciana Di Gaspare, Michele Ortolani, Leonetta Baldassarre, Marvin Zoellner, Samik Mukherjee, Oussama Moutanabbir, Giovanni Capellini, and et al. 2020. "Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells" Crystals 10, no. 3: 179. https://doi.org/10.3390/cryst10030179

Persichetti, L., Montanari, M., Ciano, C., Di Gaspare, L., Ortolani, M., Baldassarre, L., Zoellner, M., Mukherjee, S., Moutanabbir, O., Capellini, G., Virgilio, M., & De Seta, M. (2020). Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells. Crystals, 10(3), 179. https://doi.org/10.3390/cryst10030179