Order Article Reprints

Gou Y, Wang J, Cheng Y, Guo Y, Xiao X, Liu H, Tan S, Zhou L, Yang H, Deng G, et al. Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted. Crystals. 2020; 10(12):1092. https://doi.org/10.3390/cryst10121092

Gou, Yudan, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, Li Zhou, Huomu Yang, Guoliang Deng, and et al. 2020. "Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted" Crystals 10, no. 12: 1092. https://doi.org/10.3390/cryst10121092

Gou, Y., Wang, J., Cheng, Y., Guo, Y., Xiao, X., Liu, H., Tan, S., Zhou, L., Yang, H., Deng, G., & Zhou, S. (2020). Experimental and Modeling Study on the High-Performance p⁺⁺-GaAs/n⁺⁺-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted. Crystals, 10(12), 1092. https://doi.org/10.3390/cryst10121092