Next Article in Journal
Research on PF-SLAM Indoor Pedestrian Localization Algorithm Based on Feature Point Map
Next Article in Special Issue
Design and Performance Test of an Ocean Turbulent Kinetic Energy Dissipation Rate Measurement Probe
Previous Article in Journal
Approximate Solution for Electroosmotic Flow of Power-Law Fluids in a Planar Microchannel with Asymmetric Electrochemical Boundary Conditions
Previous Article in Special Issue
Method of Measuring the Mismatch of Parasitic Capacitance in MEMS Accelerometer Based on Regulating Electrostatic Stiffness
Open AccessArticle

Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

Department Electrical Engineering, Technische Universität Berlin, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
Wafer Level System Integration, Fraunhofer Institute for Reliability and Microintegration, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
Department Development, TE Connectivity GmbH, Hauert 13, 44227 Dortmund, Germany
Microsystems Engineering, University of Applied Sciences Berlin, Wilhelminenhofstraße 75A, 12459 Berlin, Germany
Authors to whom correspondence should be addressed.
Micromachines 2018, 9(6), 266;
Received: 17 April 2018 / Revised: 14 May 2018 / Accepted: 24 May 2018 / Published: 28 May 2018
(This article belongs to the Special Issue MEMS Accelerometers)
In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal piezoresistor on each end of the beam. The four piezoresistors are connected to a Wheatstone bridge. The piezoresistors are defined to 4400 Ω, which results in a width-to-depth geometry of the pn-junction of 14 μm × 1.8 μm. A finite element method (FEM) simulation model is used to determine the beam length, which complies with the resonance frequency and sensitivity. The geometry of the realized high-g sensor element is 3 × 2 × 1 mm3. To demonstrate the performance of the sensor, a shock wave bar is used to test the sensor, and a Polytec vibrometer is used as an acceleration reference. The sensor wave form tracks the laser signal very well up to 60,000 g. The sensor can be utilized in aerospace applications or in the control and detection of impact levels. View Full-Text
Keywords: high acceleration sensor; piezoresistive effect; MEMS; micro machining high acceleration sensor; piezoresistive effect; MEMS; micro machining
Show Figures

Figure 1

MDPI and ACS Style

Hu, X.; Mackowiak, P.; Bäuscher, M.; Ehrmann, O.; Lang, K.-D.; Schneider-Ramelow, M.; Linke, S.; Ngo, H.-D. Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application. Micromachines 2018, 9, 266.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop