Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films
Abstract
:1. Introduction
2. Basic Structure and Operation Principle
2.1. Basic Structure
2.2. Operation Principle
3. Fabrication Technology
4. Results and Discussion
4.1. XRD Analysis
4.2. XPS Analysis
4.3. SEM Analysis
4.4. Piezoresponse Force Microscopy (PFM) Analysis
4.5. Characteristics of the Acceleration Sensor
5. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Materials | Preparation Method | Piezoelectric Coefficient and Application | Reference |
---|---|---|---|
Li-doped ZnO | Sol-gel method | d31 = 1.50 nm/V | [8] |
ZnO | RF magnetron sputtering method | d33 = 12.30 pm/V Application: piezopolymeric transducer | [9] |
ZnO | d31 = −3.21 pC/N Application: vibration energy harvesting Resonant frequency: 24,988 Hz Output power: 0.98 μW | [19] | |
ZnO | d31 = 3.32 pC/N Application: energy scavenger | [20] | |
ZnO | Application: accelerometer Sensitivity:1.69 mV/g | [21] | |
ZnO | RF magnetron sputtering method | Application: accelerometer Sensitivity: 44.70 fC/g (mV/g) at resonant frequency (1.02 kHz) | [22] |
Li-doped ZnO | RF magnetron sputtering method | d33 = 10.55 pm/V Application: acceleration sensor Sensitivity: 29.48 mV/g at resonant frequency (1479.8 Hz) | In this work |
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Li, S.; Zhao, X.; Bai, Y.; Li, Y.; Ai, C.; Wen, D. Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films. Micromachines 2018, 9, 178. https://doi.org/10.3390/mi9040178
Li S, Zhao X, Bai Y, Li Y, Ai C, Wen D. Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films. Micromachines. 2018; 9(4):178. https://doi.org/10.3390/mi9040178
Chicago/Turabian StyleLi, Sen, Xiaofeng Zhao, Yinan Bai, Yi Li, Chunpeng Ai, and Dianzhong Wen. 2018. "Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films" Micromachines 9, no. 4: 178. https://doi.org/10.3390/mi9040178