Order Article Reprints

Hsu W-Y, Lian Y-C, Wu P-Y, Yong W-M, Sheu J-K, Lin K-L, Wu YS. Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant. Micromachines. 2018; 9(12):622. https://doi.org/10.3390/mi9120622

Hsu, Wen-Yang, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin, and YewChung Sermon Wu. 2018. "Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant" Micromachines 9, no. 12: 622. https://doi.org/10.3390/mi9120622

Hsu, W.-Y., Lian, Y.-C., Wu, P.-Y., Yong, W.-M., Sheu, J.-K., Lin, K.-L., & Wu, Y. S. (2018). Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H₃PO₄-Based Etchant. Micromachines, 9(12), 622. https://doi.org/10.3390/mi9120622