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Micromachines 2016, 7(8), 137;

Stacked Integration of MEMS on LSI

Micro System Integration Center (μSIC), The World Premier International Research Center Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-0845, Japan
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Author to whom correspondence should be addressed.
Academic Editor: Nam-Trung Nguyen
Received: 26 May 2016 / Revised: 20 July 2016 / Accepted: 1 August 2016 / Published: 5 August 2016
(This article belongs to the Special Issue 3D Integration Technologies for MEMS)
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Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAW filters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias. View Full-Text
Keywords: MEMS; LSI; stacked integration; wafer level transfer; through Si vias MEMS; LSI; stacked integration; wafer level transfer; through Si vias

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Esashi, M.; Tanaka, S. Stacked Integration of MEMS on LSI. Micromachines 2016, 7, 137.

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