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Micromachines 2015, 6(11), 1645-1654;

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Miko Elwenspoek
Received: 29 August 2015 / Revised: 21 October 2015 / Accepted: 26 October 2015 / Published: 2 November 2015
(This article belongs to the Special Issue CMOS-MEMS Sensors and Devices)
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The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz. View Full-Text
Keywords: micromachined switches; CMOS-MEMS; radio frequency micromachined switches; CMOS-MEMS; radio frequency

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Lin, C.-Y.; Hsu, C.-C.; Dai, C.-L. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology. Micromachines 2015, 6, 1645-1654.

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