Article Versions Notes

Liu Y, Zhang T, Su H, Chen J, Li X, Xu S, Ren Z, Zhu W, Du Y, Hao Y, et al. V_TH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. Micromachines. 2026; 17(8):913. https://doi.org/10.3390/mi17080913

Liu, Yuheng, Tao Zhang, Huake Su, Jiahao Chen, Xiangdong Li, Shengrui Xu, Zeyang Ren, Weidong Zhu, Yu Du, Yue Hao, and et al. 2026. "V_TH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer" Micromachines 17, no. 8: 913. https://doi.org/10.3390/mi17080913

Liu, Y., Zhang, T., Su, H., Chen, J., Li, X., Xu, S., Ren, Z., Zhu, W., Du, Y., Hao, Y., & Zhang, J. (2026). V_TH-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. Micromachines, 17(8), 913. https://doi.org/10.3390/mi17080913