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Micromachines
Volume 17
Issue 6
10.3390/mi17060673
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Editorial

New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration

by
Hao Lu
* and
Qinzhu Sun
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
*
Author to whom correspondence should be addressed.
Micromachines 2026, 17(6), 673; https://doi.org/10.3390/mi17060673
Submission received: 26 May 2026 / Accepted: 28 May 2026 / Published: 29 May 2026
(This article belongs to the Special Issue RF and Power Electronic Devices and Applications)
Versions Notes

Excerpt

Note: In lieu of an abstract, this is an excerpt from the first page.

With the rapid development of 5G and beyond 5G (B5G) wireless networks, global connectivity is undergoing a revolutionary transformation [...]

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MDPI and ACS Style

Lu, H.; Sun, Q. New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration. Micromachines 2026, 17, 673. https://doi.org/10.3390/mi17060673

AMA Style

Lu H, Sun Q. New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration. Micromachines. 2026; 17(6):673. https://doi.org/10.3390/mi17060673

Chicago/Turabian Style

Lu, Hao, and Qinzhu Sun. 2026. "New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration" Micromachines 17, no. 6: 673. https://doi.org/10.3390/mi17060673

APA Style

Lu, H., & Sun, Q. (2026). New Advances in Wide-Bandgap RF and Power Electronic Devices: From Material Innovation to System Integration. Micromachines, 17(6), 673. https://doi.org/10.3390/mi17060673

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