Wang, C.; Liao, X.; Gong, M.; Xiao, F.; Guan, H.; Zhang, F.; Zhou, D.
A 6–18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. Micromachines 2026, 17, 338.
https://doi.org/10.3390/mi17030338
AMA Style
Wang C, Liao X, Gong M, Xiao F, Guan H, Zhang F, Zhou D.
A 6–18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. Micromachines. 2026; 17(3):338.
https://doi.org/10.3390/mi17030338
Chicago/Turabian Style
Wang, Cetian, Xuejie Liao, Moquan Gong, Fei Xiao, He Guan, Fan Zhang, and Deyun Zhou.
2026. "A 6–18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching" Micromachines 17, no. 3: 338.
https://doi.org/10.3390/mi17030338
APA Style
Wang, C., Liao, X., Gong, M., Xiao, F., Guan, H., Zhang, F., & Zhou, D.
(2026). A 6–18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. Micromachines, 17(3), 338.
https://doi.org/10.3390/mi17030338