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Micromachines
Volume 16
Issue 9
10.3390/mi16090968
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Review

Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias

by
Heebo Ha
1,
Hongju Kim
2,
Sumin Lee
1,
Sooyong Choi
1,
Chunghyeon Choi
1,
Wan Yusmawati Wan Yusoff
3,
Ali Shan
4,
Sooman Lim
4,* and
Byungil Hwang
2,*
1
Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
2
School of Integrative Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
3
Department of Physics, Centre for Defence Foundation Studies, Universiti Pertahanan Nasional Malaysia, Kem Sungai Besi, Kuala Lumpur 57000, Malaysia
4
Department of Flexible and Printable Electronics, LANL-JBNU Engineering Institute, Jeonbuk National University, Jeonju 54896, Republic of Korea
*
Authors to whom correspondence should be addressed.
Micromachines 2025, 16(9), 968; https://doi.org/10.3390/mi16090968
Submission received: 28 July 2025 / Revised: 20 August 2025 / Accepted: 21 August 2025 / Published: 22 August 2025
(This article belongs to the Section D：Materials and Processing)
Versions Notes

Abstract

Three-dimensional integrated circuit (3D IC) technology is an innovative approach in the semiconductor industry aimed at enhancing performance and reducing power consumption. However, thermal management issues arising from high-density stacking pose significant challenges. Carbon nanotubes (CNTs) have gained attention as a promising material for addressing the thermal management problems of through-silicon vias (TSVs) owing to their unique properties, such as high thermal conductivity, electrical conductivity, excellent mechanical strength, and low coefficient of thermal expansion (CTE). This paper reviews various applications and the latest research results on CNT-based TSVs. Furthermore, it proposes a novel TSV design using CNT–copper–tin composites to optimize the performance and assess the feasibility of CNT-based TSVs.
Keywords: CNT–Cu composites; thermal management; 3D integrated circuits (3D ICs); through-silicon vias (TSVs); carbon nanotubes (CNTs) CNT–Cu composites; thermal management; 3D integrated circuits (3D ICs); through-silicon vias (TSVs); carbon nanotubes (CNTs)

Share and Cite

MDPI and ACS Style

Ha, H.; Kim, H.; Lee, S.; Choi, S.; Choi, C.; Yusoff, W.Y.W.; Shan, A.; Lim, S.; Hwang, B. Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias. Micromachines 2025, 16, 968. https://doi.org/10.3390/mi16090968

AMA Style

Ha H, Kim H, Lee S, Choi S, Choi C, Yusoff WYW, Shan A, Lim S, Hwang B. Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias. Micromachines. 2025; 16(9):968. https://doi.org/10.3390/mi16090968

Chicago/Turabian Style

Ha, Heebo, Hongju Kim, Sumin Lee, Sooyong Choi, Chunghyeon Choi, Wan Yusmawati Wan Yusoff, Ali Shan, Sooman Lim, and Byungil Hwang. 2025. "Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias" Micromachines 16, no. 9: 968. https://doi.org/10.3390/mi16090968

APA Style

Ha, H., Kim, H., Lee, S., Choi, S., Choi, C., Yusoff, W. Y. W., Shan, A., Lim, S., & Hwang, B. (2025). Overview of Thermal Management Solution for 3D Integrated Circuits Using Carbon-Nanotube-Based Silicon Through-Vias. Micromachines, 16(9), 968. https://doi.org/10.3390/mi16090968

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