Order Article Reprints

Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H, et al. High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. Micromachines. 2025; 16(9):1067. https://doi.org/10.3390/mi16091067

Du, Jiale, Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Kaiwen Chen, Tianqi Pan, Yifan Chen, Hailin Liu, and et al. 2025. "High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact" Micromachines 16, no. 9: 1067. https://doi.org/10.3390/mi16091067

Du, J., Lu, H., Hou, B., Yang, L., Zhang, M., Wu, M., Chen, K., Pan, T., Chen, Y., Liu, H., Chang, Q., Ma, X., & Hao, Y. (2025). High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. Micromachines, 16(9), 1067. https://doi.org/10.3390/mi16091067