Du, J.; Lu, H.; Hou, B.; Yang, L.; Zhang, M.; Wu, M.; Chen, K.; Pan, T.; Chen, Y.; Liu, H.;
et al. High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. Micromachines 2025, 16, 1067.
https://doi.org/10.3390/mi16091067
AMA Style
Du J, Lu H, Hou B, Yang L, Zhang M, Wu M, Chen K, Pan T, Chen Y, Liu H,
et al. High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. Micromachines. 2025; 16(9):1067.
https://doi.org/10.3390/mi16091067
Chicago/Turabian Style
Du, Jiale, Hao Lu, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Kaiwen Chen, Tianqi Pan, Yifan Chen, Hailin Liu,
and et al. 2025. "High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact" Micromachines 16, no. 9: 1067.
https://doi.org/10.3390/mi16091067
APA Style
Du, J., Lu, H., Hou, B., Yang, L., Zhang, M., Wu, M., Chen, K., Pan, T., Chen, Y., Liu, H., Chang, Q., Ma, X., & Hao, Y.
(2025). High Power Density X-Band GaN-on-Si HEMTs with 10.2 W/mm Used by Low Parasitic Gold-Free Ohmic Contact. Micromachines, 16(9), 1067.
https://doi.org/10.3390/mi16091067
