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Volume 16
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10.3390/mi16070761
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Article

Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light

by
Yulei Zhang
1,
Xi Wang
1,2,*,
Lechen Liu
1,
Xuan Ji
1,
Junhui Hou
1 and
Hongbin Pu
1,2
1
Department of Electrical Engineering, Xi’an University of Technology, Xi’an 710048, China
2
Xi’an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi’an 710048, China
*
Author to whom correspondence should be addressed.
Micromachines 2025, 16(7), 761; https://doi.org/10.3390/mi16070761
Submission received: 14 May 2025 / Revised: 19 June 2025 / Accepted: 27 June 2025 / Published: 29 June 2025
(This article belongs to the Section D1: Semiconductor Devices)
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Abstract

The impact-ionization-enhanced mechanism is introduced into a SiC light-triggered thyristor (LTT) to improve its switching speed under weak UV illumination. The effects of impact ionization on photogenerated carrier multiplication and the dynamic switching performance of the SiC LTT are investigated through TCAD simulation. The relationships between bias voltage, UV light intensity, and key dynamic parameters are analyzed. Simulation results indicate that when the bias voltage exceeds 14 kV, the device enters the avalanche multiplication regime, leading to a significant increase in photocurrent under a given UV intensity. As the bias voltage increases, the turn-on time of the thyristor first decreases, then saturates, and finally drops rapidly. Under UV illumination of 100 mW/cm2, the turn-on time decreases from 10.1 μs at 1 kV to 0.85 μs at 18 kV, while the switching energy dissipation at 18 kV is only 1292.3 mJ/cm2. These results demonstrate that the impact-ionization-enhanced effect substantially improves the switching performance of SiC LTTs.
Keywords: 4H-SiC; thyristor; light-triggered switches; UV light; impact ionization 4H-SiC; thyristor; light-triggered switches; UV light; impact ionization

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MDPI and ACS Style

Zhang, Y.; Wang, X.; Liu, L.; Ji, X.; Hou, J.; Pu, H. Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light. Micromachines 2025, 16, 761. https://doi.org/10.3390/mi16070761

AMA Style

Zhang Y, Wang X, Liu L, Ji X, Hou J, Pu H. Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light. Micromachines. 2025; 16(7):761. https://doi.org/10.3390/mi16070761

Chicago/Turabian Style

Zhang, Yulei, Xi Wang, Lechen Liu, Xuan Ji, Junhui Hou, and Hongbin Pu. 2025. "Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light" Micromachines 16, no. 7: 761. https://doi.org/10.3390/mi16070761

APA Style

Zhang, Y., Wang, X., Liu, L., Ji, X., Hou, J., & Pu, H. (2025). Investigation of Impact-Ionization-Enhanced Effect on SiC Thyristors Triggered by Weak UV Light. Micromachines, 16(7), 761. https://doi.org/10.3390/mi16070761

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