Zhou, H.; Wang, X.; Wang, S.; Liu, C.; Chen, D.; Li, J.; Ma, L.; Zhang, G.
Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes. Micromachines 2025, 16, 583.
https://doi.org/10.3390/mi16050583
AMA Style
Zhou H, Wang X, Wang S, Liu C, Chen D, Li J, Ma L, Zhang G.
Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes. Micromachines. 2025; 16(5):583.
https://doi.org/10.3390/mi16050583
Chicago/Turabian Style
Zhou, Hao, Xiang Wang, Shulong Wang, Chenyu Liu, Dongliang Chen, Jiarui Li, Lan Ma, and Guohao Zhang.
2025. "Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes" Micromachines 16, no. 5: 583.
https://doi.org/10.3390/mi16050583
APA Style
Zhou, H., Wang, X., Wang, S., Liu, C., Chen, D., Li, J., Ma, L., & Zhang, G.
(2025). Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes. Micromachines, 16(5), 583.
https://doi.org/10.3390/mi16050583