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Journal: Micromachines, 2025
Volume: 16
Number: 473
Article:
Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication
Authors:
by
Yinmiao Yin, Qian Fan, Xianfeng Ni, Chao Guo and Xing Gu
Link:
https://www.mdpi.com/2072-666X/16/4/473
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