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Journal: Micromachines, 2025
Volume: 16
Number: 371

Article: Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method
Authors: by Monikuntala Bhattacharya, Michael Jin, Hengyu Yu, Shiva Houshmand, Jiashu Qian, Marvin H. White, Atsushi Shimbori and Anant K. Agarwal
Link: https://www.mdpi.com/2072-666X/16/4/371

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