Hengyu Yu received his B.Sc. degree in Electrical Engineering from the School of Electrical Engineering and Automation, Anhui University, Hefei, China, in June 2018, and his Ph.D. degree in Electrical Engineering from the College of Electrical and Information Engineering, Hunan University, Changsha, in June 2023. He has been an OSU ECE WBG member since 2023, pursuing his research interests involving silicon carbide power devices and power ICs, the reliability and ruggedness of silicon carbide power devices, and their applications in power electronics.
Marvin H. White received his A.S. degree in Engineering from the Henry Ford Community College (1957) a B.S.E. degree in Physics and Math (1960), an M.S. degree in Physics (1961) from the University of Michigan, and a Ph.D. degree in Electrical Engineering (1969) from the Ohio State University. In 1961 he joined the Westinghouse Solid-State Laboratory in Baltimore, MD, where he worked on advanced military and NASA imaging systems. From 1961 to 1981 he worked at Westinghouse as an Advisory Engineer in the design of low-power, custom integrated circuits with technologies of CMOS, Bipolar, MNOS, and CCDs. In this period he was an adjunct Professor in the Electrical Engineering Department of the University of Maryland and a visiting Fulbright Professor at the Catholique Universite’ de Louvain in Louvain-la-Neuve, Belgium. In 1981, he became the Sherman Fairchild Professor in Solid-State Studies and Electrical Engineering at Lehigh University. He served as a Visiting Researcher at the Naval Research Laboratories (1987) and a Program Director in Solid-State & Microstructures at the National Science Foundation (1995–96). In 1997 he received the Eleanor and Joseph Libsch Research Award at Lehigh University. He is an IEEE Fellow (1974) and the recipient of the J. J. Ebers Award (1997) and the Masaru Ibuka IEEE Consumer Electronics Award (2000). He is also a member of the National Academy of Engineers (2001).
Anant K. Agarwal, Ph.D., joined The Ohio State University at Columbus, Ohio in August 2017. Previously, he was with the US Department of Energy (DOE) during March 2013–November 2016. While at DOE, he helped create and manage four programs related to wide band-gap technology and their applications including Power America, Next Generation of Electric Machines (I and II), and Graduate Traineeships. From 1999 to 2013, he was the Director of Research and Development for Wide Band Gap (WBG) devices at Cree, Inc. In this role, he oversaw the development and commercialization of Silicon Carbide diode and MOSFET power devices. As a leading research scientist in this area, his life goal has been to successfully commercialize WBG power devices to resurrect the domestic power electronics industry while educating the next generation of researchers. This will ultimately enable the creation of high-quality manufacturing jobs in the US while perpetuating a high-tech US workforce.
