Bhattacharya, M.; Jin, M.; Yu, H.; Houshmand, S.; Qian, J.; White, M.H.; Shimbori, A.; Agarwal, A.K.
Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method. Micromachines 2025, 16, 371.
https://doi.org/10.3390/mi16040371
AMA Style
Bhattacharya M, Jin M, Yu H, Houshmand S, Qian J, White MH, Shimbori A, Agarwal AK.
Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method. Micromachines. 2025; 16(4):371.
https://doi.org/10.3390/mi16040371
Chicago/Turabian Style
Bhattacharya, Monikuntala, Michael Jin, Hengyu Yu, Shiva Houshmand, Jiashu Qian, Marvin H. White, Atsushi Shimbori, and Anant K. Agarwal.
2025. "Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method" Micromachines 16, no. 4: 371.
https://doi.org/10.3390/mi16040371
APA Style
Bhattacharya, M., Jin, M., Yu, H., Houshmand, S., Qian, J., White, M. H., Shimbori, A., & Agarwal, A. K.
(2025). Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method. Micromachines, 16(4), 371.
https://doi.org/10.3390/mi16040371
