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Journal: Micromachines, 2025
Volume: 16
Number: 188
188
Article: A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations
Authors: by Marco Boccarossa, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace and Marina Antoniou
Link: https://www.mdpi.com/2072-666X/16/2/188

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