Ham, G.; Shin, E.; Yoon, S.; Yang, J.; Choi, Y.; Lim, G.; Kim, K.
Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. Micromachines 2025, 16, 1214.
https://doi.org/10.3390/mi16111214
AMA Style
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.
Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. Micromachines. 2025; 16(11):1214.
https://doi.org/10.3390/mi16111214
Chicago/Turabian Style
Ham, Goeun, Eungyeol Shin, Sangwon Yoon, Jihoon Yang, Youngjin Choi, Gunwoo Lim, and Kwangeun Kim.
2025. "Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density" Micromachines 16, no. 11: 1214.
https://doi.org/10.3390/mi16111214
APA Style
Ham, G., Shin, E., Yoon, S., Yang, J., Choi, Y., Lim, G., & Kim, K.
(2025). Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. Micromachines, 16(11), 1214.
https://doi.org/10.3390/mi16111214
