Jiang, G.; Li, W.; Luo, X.; Liu, Y.; Fu, C.; Zhang, Q.; Zhang, G.; Lin, Z.; Cui, P.
Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. Micromachines 2025, 16, 1147.
https://doi.org/10.3390/mi16101147
AMA Style
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.
Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. Micromachines. 2025; 16(10):1147.
https://doi.org/10.3390/mi16101147
Chicago/Turabian Style
Jiang, Guangyuan, Weikang Li, Xin Luo, Yang Liu, Chen Fu, Qingying Zhang, Guangyuan Zhang, Zhaojun Lin, and Peng Cui.
2025. "Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors" Micromachines 16, no. 10: 1147.
https://doi.org/10.3390/mi16101147
APA Style
Jiang, G., Li, W., Luo, X., Liu, Y., Fu, C., Zhang, Q., Zhang, G., Lin, Z., & Cui, P.
(2025). Influence of LPCVD-Si3N4 Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. Micromachines, 16(10), 1147.
https://doi.org/10.3390/mi16101147
