Cheng, Q.; Yang, M.; Gao, Z.; Wang, R.; He, J.; Yan, F.; Tang, X.; Zhang, W.; Hu, Z.; Mu, J.
Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines 2025, 16, 1093.
https://doi.org/10.3390/mi16101093
AMA Style
Cheng Q, Yang M, Gao Z, Wang R, He J, Yan F, Tang X, Zhang W, Hu Z, Mu J.
Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines. 2025; 16(10):1093.
https://doi.org/10.3390/mi16101093
Chicago/Turabian Style
Cheng, Qianding, Ming Yang, Zhiliang Gao, Ruojue Wang, Jihao He, Feng Yan, Xu Tang, Weihong Zhang, Zijun Hu, and Jingguo Mu.
2025. "Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor" Micromachines 16, no. 10: 1093.
https://doi.org/10.3390/mi16101093
APA Style
Cheng, Q., Yang, M., Gao, Z., Wang, R., He, J., Yan, F., Tang, X., Zhang, W., Hu, Z., & Mu, J.
(2025). Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor. Micromachines, 16(10), 1093.
https://doi.org/10.3390/mi16101093
