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Journal: Micromachines, 2024
Volume: 15
Number: 1100
Article:
Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature
Authors:
by
Chang Liu, Yiqiang Chen, Yuhan Xie, Hongxia Liu and Zongqi Cai
Link:
https://www.mdpi.com/2072-666X/15/9/1100
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