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Micromachines2024, 15(8), 1005;https://doi.org/10.3390/mi15081005

Journal: MicromachinesVolume: 15Number: 1005

Article: A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Authors:
Jie Zhang¹,
Xiangdong Li^1,2,* and
Jian Ji¹
et al.

Link: https://www.mdpi.com/2072-666X/15/8/1005

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