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Journal: Micromachines, 2024
Volume: 15
Number: 1005

Article: A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric
Authors: by Jie Zhang, Xiangdong Li, Jian Ji, Shuzhen You, Long Chen, Lezhi Wang, Zilan Li, Yue Hao and Jincheng Zhang
Link: https://www.mdpi.com/2072-666X/15/8/1005

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