Order Article Reprints

Zhang J, Li X, Ji J, You S, Chen L, Wang L, Li Z, Hao Y, Zhang J. A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric. Micromachines. 2024; 15(8):1005. https://doi.org/10.3390/mi15081005

Zhang, Jie, Xiangdong Li, Jian Ji, Shuzhen You, Long Chen, Lezhi Wang, Zilan Li, Yue Hao, and Jincheng Zhang. 2024. "A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric" Micromachines 15, no. 8: 1005. https://doi.org/10.3390/mi15081005

Zhang, J., Li, X., Ji, J., You, S., Chen, L., Wang, L., Li, Z., Hao, Y., & Zhang, J. (2024). A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric. Micromachines, 15(8), 1005. https://doi.org/10.3390/mi15081005