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Journal: Micromachines, 2024
Volume: 15
Number: 933

Article: A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode
Authors: by Xiaobo Cao, Jing Liu, Yingnan An, Xing Ren and Zhonggang Yin
Link: https://www.mdpi.com/2072-666X/15/7/933

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