Ülkü, A.; Uçar, E.; Serin, R.B.; Kaçar, R.; Artuç, M.; Menşur, E.; Oral, A.Y.
Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study. Micromachines 2024, 15, 726.
https://doi.org/10.3390/mi15060726
AMA Style
Ülkü A, Uçar E, Serin RB, Kaçar R, Artuç M, Menşur E, Oral AY.
Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study. Micromachines. 2024; 15(6):726.
https://doi.org/10.3390/mi15060726
Chicago/Turabian Style
Ülkü, Alper, Esin Uçar, Ramis Berkay Serin, Rifat Kaçar, Murat Artuç, Ebru Menşur, and Ahmet Yavuz Oral.
2024. "Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study" Micromachines 15, no. 6: 726.
https://doi.org/10.3390/mi15060726
APA Style
Ülkü, A., Uçar, E., Serin, R. B., Kaçar, R., Artuç, M., Menşur, E., & Oral, A. Y.
(2024). Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study. Micromachines, 15(6), 726.
https://doi.org/10.3390/mi15060726