Yu, Y.; Cheng, Z.; Hu, Y.; Lv, R.; Hu, S.
A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance. Micromachines 2024, 15, 461.
https://doi.org/10.3390/mi15040461
AMA Style
Yu Y, Cheng Z, Hu Y, Lv R, Hu S.
A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance. Micromachines. 2024; 15(4):461.
https://doi.org/10.3390/mi15040461
Chicago/Turabian Style
Yu, Yiren, Zijun Cheng, Yi Hu, Ruiyi Lv, and Shengdong Hu.
2024. "A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance" Micromachines 15, no. 4: 461.
https://doi.org/10.3390/mi15040461
APA Style
Yu, Y., Cheng, Z., Hu, Y., Lv, R., & Hu, S.
(2024). A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance. Micromachines, 15(4), 461.
https://doi.org/10.3390/mi15040461